Wireless Circuits

Most of the circuits are for applications in millimeter wave wireless LAN.

Publications

The following electronic papers at this web site are in journal publications and therefore have copyrights attached to them. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the the appropriate publisher.

Barium Strontium Titanate Capacitor Fabrication on Copper Printed Circuit Board

For more information see:

Al P. Freundorfer, M. Sayer, and J. Po, "Barium Strontium Titanate Capacitor Fabrication on Copper Printed Circuit Board," IEEE Transactions on Components, Packaging and Manufacturing Technology, Year: 2016, Volume: 6, Issue: 11, Pages: 1663 1666, Nov. 2016.

Ca₅Nb₂TiO₁₂ Rectangular Dielectric Resonator Antenna on Silicon for Wireless Applications

For more information see:

A.P. Freundorfer, M. Sayer, P.V. Bijumon and Y.M.M. Antar, "Ca₅Nb₂TiO₁₂ Rectangular Dielectric Resonator Antenna on Silicon for Wireless Applications," ISSCS2013 International Symposium on Systems and Circuits, Iasi Romania, July 9- July 12, 2013, P95, pp. 1- 4.

Integrated on-chip Ba₂Ti₉O₂₀ Dielectric Resonator Oscillator in GaAs Technology

A.P. Freundorfer, P.V. Bijumon, and M. Sayer
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 μm GaAs MESFET that had the Ba₂Ti₉O₂₀ dielectric resonator (DR) grown to the surface of the chip at a temperature of 150^oC without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn_1/3Ta_2/3)O₃, epoxied to it. The Ba₂Ti₉O₂₀ DRO had a measured output power power of 5.68dBm at 25.6 GHz and a phase noise of -114 dBc @ 1MHz.

Simulation:Agilent ADS and Ansoft HFSS
Layout tools: ADS and Cadence
Fab: Nortel MESFET
Technical Support: Queen's
Funding: NSERC

For more information see:

A.P. Freundorfer, P.V. Bijumon, and M. Sayer, "Integrated on-chip Ba₂Ti₉O₂₀ Dielectric Resonator Oscillator in GaAs Technology," 2009 IEEE MTT-S International Microwave Symposium Digest, Boston, Massachusetts, USA, 7-12 June 2009, pp. 1105-1108.

Dielectric Resonator Antenna on Silicon Substrate for System On-Chip Applications

P. V. Bijumon, Y. M. M. Antar, A. P. Freundorfer, and M. Sayer
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − This paper presents for the first time the design and performance of a novel integrated dielectric resonator antenna fabricated on a high conducting silicon substrate for system on-chip applications. A differential launcher to excite the TE_01d mode of the high permittivity cylindrical dielectric resonator was fabricated using the IBM SiGeHP5 process. The proposed antenna integrated on a silicon substrate of conductivity 7.41 S/m has an impedance bandwidth of 2725 MHz at 27.78 GHz, while the achieved gain and radiation efficiency are 1 dBi and 45% respectively. The design parameters were optimized employing Ansoft HFSS simulation software. Very good agreement has been observed between simulation and experimental results. The results demonstrate that integration of dielectric resonator antennas on silicon is viable, leading to the fabrication of high efficient RF circuits, ultra miniaturization of ICs and for the possible integration of active devices.

Simulation: Ansoft HFSS
Layout tools: ADS and Cadence
Fab: IBM SiGe
Technical Support: Queen's and Royal Military College
Funding: NSERC

For more information see:

P.V. Bijumon, Y. Antar, A.P. Freundorfer, M. Sayer, "Dielectric Resonator Antenna on Silicon Substrate for System On-Chip Applications," IEEE Trans. on Antennas and Propagation, Vol. 56, No. 11, Nov. 2008, pp. 3404- 3410.

An Integrated Receiver for Wireless Applications

B.M. Frank¹, M. J. Keller², H.F. Hammad¹, P. R. Shearing², A.P Freundorfer¹, Y.M.M Antar²

¹ Department of Electrical and Computer Engineering,
Queen's University

² Department of Electrical and Computer Engineering,
Royal Military College of Canada

Abstract − This paper will present the development of a 30GHz integrated receiver for wireless applications. The purpose is to demonstrate the feasibility of implementing such a device as a monolithic microwave integrated circuit (MMIC) using an inexpensive and readily available technology, a 0.8 mm MESFET process. The receiver module consists of a broadband antenna, a 30 GHz balanced common gate amplifier, a single balanced downconvert mixer, and a 28 GHz dielectric resonator oscillator. Simulations using HP Libra Series IV indicate the conversion of an RF signal at 30 GHz to a signal at 2 GHz with an estimated conversion loss of 2 dB and a noise figure of 13 dB.

Receiver chip with 27 GHz DRO, 30 GHz antenna, 30 GHz amplifier and down convert mixer.

Simulation: HP/eesof Libra series IV (primary) and Zeland IE3D (secondary)
Layout tools: HP/eesof Libra series IV (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation) and Nortel
Technical Support: CRC, Nortel Technologies and COM DEV
Funding: Nortel, NSERC and CITO

For more information see:

B.M. Frank, M.J. Keller, H.F. Hammad, P.R. Shearing, A.P. Freundorfer and Y.M.M. Antar, "An Integrated Receiver for Wireless Applications," Symposium on Antenna Technology and Applied Electromagnetics, ANTEM'98, Ottawa, Canada, Aug. 1998, pp. 95-98.

A Coplanar Ka-Band Balanced Common-Gate Amplifier in 0.8 mm GaAs MESFET

P. R. Shearing, A.P. Freundorfer and Y.M. Antar
Department of Electrical and Computer Engineering
Royal Military College of Canada
Kingston, Ontario, CANADA
freund@queensu.ca

Abstract − A balanced amplifier utilizing 0.8 mm MESFET common-gate (CG) transistors was demonstrated to provide 6 dB of gain at 30 GHz and a 3 dB bandwidth of 3.5 GHz. The power at 1 dB gain compression was 9.67 dBm for the amplifier. The amplifier also demonstrated unconditional stability over the full frequency range. To our knowledge, this is the highest frequency amplifier with gain ever demonstrated with a process of this kind.

Chip Photograph CG Balanced Amplifier

For more information see:

P. Shearing, A.P. Freundorfer and Y. Antar, "A Coplanar Ka-Band Common-Gate Amplifier in 0.8mm GaAs MESFET," Symposium on Antenna Technology and Applied Electromagnetics, ANTEM'98, Ottawa, Canada, Aug. 1998, pp. 61-64.
P. Shearing, "Ka-Band Balance MESFET Amplifier," Royal Military College, M.Sc. 1997.

A Novel Common Gate Mixer for Wireless Applications

B.M.Frank, A.P. Freundorfer and Y.M. Antar
Department of Electrical and Computer Engineering
Royal Military College of Canada
Kingston, Ontario, CANADA
freund@queensu.ca

Abstract − In this paper, a balanced common gate mixer is presented. The common gate configuration al-lows 0.8 mm MESFETs to be used at frequencies in excess of their fby eliminating the Miller effect. Measurements on the mixer indicate a conversion loss of 10.7 dB, with a third order intercept at 0 dBm output power. This performance is in the range of reported mixers at this frequency, even though most mixers use higher-tolerance and more expensive processes.

Chip Photograph CG Balanced Mixer

Simulation: HP/eesof Libra series IV (primary) and Zeland IE3D (secondary)
Layout tools: HP/eesof Libra series IV (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron SAGFET (through Canadian Microelectronics Corporation) and Nortel
Technical Support: Nortel Technologies
Funding: NSERC and CITO

For more information see:

B.M. Frank, A.P. Freundorfer, Y.M.M. Antar, 1999, "A Novel Common Gate Mixer for Wireless Applications," European Microwave Conference, GAAS'99, Munich, Session G-TuF5.
B.M. Frank, A.P. Freundorfer and Y.M.M. Antar, "A Novel Common Gate Mixer for Wireless Applications," IEEE Trans. on Microwave Theory and Techneques, Vol. 50, No. 5, May 2002, pp 1433-1435.
B. Frank, " A Novel Common Gate Mixer for Wireless Applications,” Queen's University, M.Sc. 1999.

Design of a Single Chip GaAs MESFET Dielectric Resonator Oscillator at 26 GHz

I. Hilborn, A. P. Freundorfer, J. Show, and M. G. Keller
Department of Electrical and Computer Engineering
Royal Military College of Canada
Kingston, Ontario, CANADA
freund@queensu.ca

Abstract −This paper outlines the design of a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in GaAs MESFET that had the dielectric resonator (DR) mounted on chip. The measured output power was 6.5 dBm with a frequency of 25.91 GHz. We present here for the first time the simulated results of 6.3 dBm at 26.01 GHz which compares well with the measured results. The calculated DC-RF efficiency was 3.4%. The phase noise at 1 MHz from the carrier frequency was determined to be -122 dBc.

Chip Photograph of DRO

Simulation: HP/eesof Libra series IV (primary) and Zeland IE3D (secondary)
Layout tools: HP/eesof Libra series IV (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation) and Nortel
Technical Support: Nortel Technologies and COM DEV
Funding: NSERC and CITO

For more information see:

I. Hilborn, A.P. Freundorfer, J. Show, and M. G. Keller, "Design of a Single Chip GaAs MESFET Dielectric Resonator Oscillator at 26 GHz," Conference on Electrical and Computer Engineering, CCECE 2007, Vancouver, British Columbia, Canada, 22-26 April 2007, paper T38-4, pp. :671 - 674.
M. Keller, A.P. Freundorfer and Y.Antar, " A Single Chip Coplanar 0.8mm GaAs MESFET K/Ka Band DRO," IEEE Microwave and Guided Wave Letters, Vol. 9, No. 12, Dec. 1999, pp. 526-528.

A Ka-band GaInP/GaAs HBT Receiver

A.P. Freundorfer, Y.Jamani and C. Falt*
Department of Electrical and Computer Engineering
Queen’s University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

*Nortel
Advanced Technology Laboratory
PO Box 3511, Station C
Ottawa, Ontario, Canada K1Y 4H7

Abstract − A Ka-band GaInP/GaAs HBT receiver has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 GHz to 30 GHz, and a conversion gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a receiver using transistors from digital HBT library.

Receiver chip layout.

Simulation: Hspice, HP/eesof Libra series IV and Zeland IE3D
Layout tools: HP/eesof Libra series IV (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel HBT
Technical Support: CRC and Nortel Technologies
Funding: NSERC and Nortel Technologies

For more information see:

A.P. Freundorfer and Y. Jamani, 1997, "A Ka-band GaInP/GaAs HBT Receiver," IEEE Antennas and Prop. Soc. Int. Symp./ 1997 North American Radio Sci. Meeting, 1997 IEEE APS Int. Symp/ URSI meeting, July, Montreal, Vol. 1, pp. 582-585.
A.P. Freundorfer, Y. Jamani and C. Falt, "A Ka-band GaInP/GaAs HBT Four-stage LNA," IEEE MTT-S 1996 International Microwave Symposium, San Francisco, June 16-21, 1996, paper TU1A-4.
A.P. Freundorfer and Y. Jamani, 1997, "A Ka-band GaInP/GaAs HBT Double Balanced Downconvert Mixer using Lumped Elements," IEEE Antennas and Prop. Soc. Int. Symp./ 1997 North American Radio Sci. Meeting, 1997 IEEE APS Int. Symp/ URSI meeting, July, Montreal, Vol. 1, pp. 578-581.

A Ka-band GaInP/GaAs HBT Double Balanced Downconvert Mixer using Lumped Element Balun

A.P. Freundorfer and Y. Jamani
Department of Electrical and Computer Engineering
Queen’s University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − A Ka-band GaInP/GaAs HBT receiver has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. A conversion gain of greater than 15 dB was measured. These results are the best reported at Ka-band for a receiver using transistors from digital HBT library.

For more information see:

A.P. Freundorfer and Y. Jamani, 1997, "A Ka-band GaInP/GaAs HBT Double Balanced Downconvert Mixer using Lumped Elements," IEEE Antennas and Prop. Soc. Int. Symp./ 1997 North American Radio Sci. Meeting, 1997 IEEE APS Int. Symp/ URSI meeting, July, Montreal, Vol. 1, pp. 578-581.

A Ka-band GaInP/GaAs HBT Four-stage LNA

A.P. Freundorfer, Y. Jamani and C. Falt*
Department of Electrical and Computer Engineering
Queen’s University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

*Nortel
Advanced Technology Laboratory
PO Box 3511, Station C
Ottawa, Ontario, Canada K1Y 4H7

Abstract − A Ka-band GaInP/GaAs HBT four-stage LNA has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 GHz to 30 GHz, and a gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a LNA using transistors from digital HBT library.

Layout of four stage Ka-band LNA

Simulation: HP/eesof Libra series IV (secondary) and Zeland IE3D (primary)
Layout tools: HP/eesof Libra series IV (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel HBT
Technical Support: CRC and Nortel Technologies
Funding: NSERC and Nortel Technologies

For more information see:

A.P. Freundorfer, Y. Jamani and C. Falt, "A Ka-band GaInP/GaAs HBT Four-stage LNA," IEEE MTT-S 1996 International Microwave Symposium, San Francisco, June 16-21, 1996, paper TU1A-4.
A.P. Freundorfer and Y. Jamani, 1997, "A Ka-band GaInP/GaAs HBT Receiver," IEEE Antennas and Prop. Soc. Int. Symp./ 1997 North American Radio Sci. Meeting, 1997 IEEE APS Int. Symp/ URSI meeting, July, Montreal, Vol. 1, pp. 582-585.

A Ka-band GaInP/GaAs HBT Double Balanced Upconvert Mixer using Lumped Element Balun

A.P. Freundorfer and C. Falt^*
Department of Electrical and Computer Engineering
Queen’s University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

*Nortel
Advanced Technology Laboratory
PO Box 3511, Station C
Ottawa, Ontario, Canada K1Y 4H7

Abstract − A Ka-band GaInP/GaAs HBT double balanced upconvert mixer has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. A conversion gain of 1 dB, and an output power of -10 dBm from 27 GHz to 30 GHz for an LO input power of 10 dBm at 26 GHz were measured. The LO isolation to the output was measured to be 20 dB. These results are the best reported at Ka-band for a mixer using transistors from digital HBT library.

Ka-band double balanced mixer with lumped element balun

Simulation: Hspice (primary) HP/eesof Libra series IV (secondary) and Zeland IE3D (secondary)
Layout tools: HP/eesof Libra series IV (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel HBT
Technical Support: CRC and Nortel Technologies
Funding: NSERC and Nortel Technologies

For more information see:

A.P. Freundorfer and C. Falt, "A Ka-band GaInP/GaAs HBT Double Balanced Upconvert Mixer using Lumped Element Balun," IEEE MTT-S 1996 International Microwave Symposium, San Francisco, June 16-21, 1996, paper OF-2-39.

Broadband Folded Wilkinson Power Combiner/Splitter

Yi Sun and A.P. Freundorfer
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − A new folded Wilkinson power combiner/splitter has been realized at millimeter-wave frequency with an area that is one half that of the standard two-stage Wilkinson power combiner. The new splitter has an insertion loss of 5dB, an isolation of 15dB and a return loss 15dB from 15 to 45 GHz .

Simulation: ADS momentum and Zeland IE3D
Layout tools: ADS (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel HBT
Technical Support: Nortel Networks
Funding: NSERC and Nortel Networks

For more information see:

Yi Sun and A.P. Freundorfer, "Broadband Folded Wilkinson Power Combiner/Splitter," IEEE Microwave and Wireless Components Letters, Accepted, 2003.

A novel 15 to 45 GHz monolithic passive balun for MMICs applications

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − This paper presents the design and performance characteristics of a novel broadband monolithic passive balun that has been developed for MMIC’s applications. The new balun utilizes a multi-dielectric layer structure to achieve a broadband performance of up to 3:1 in a simple coplanar configuration. A return loss better than 15 dB, with a maximum insertion loss of 4.5 dB including the 3 dB power splitting loss from 15 to 45 GHz has been realized. The developed balun also achieves better than 0.35 dB and 1.5^o of amplitude and phase imbalance over the same frequency band. This performance is specially important to the intended use with wideband double balanced mixers, and amplifiers.

For more information see:

.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, "A novel 15 to 45 GHz monolithic passive balun for MMICs applications," Microwave Symposium Digest, 2003 IEEE MTT-S International , Volume: 1 , 8-13 June 2003, pp. 31 -34 vol.1.

A QPSK DIRECT DIGITAL MODULATOR IN GaAs HBT at 28 GHz

Yi Sun, A.P. Freundorfer and D. Sawatzky
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − A new overlay coupler and power combiner have been realized at millimeter-wave frequency. The coupler and power combiner have an area that is less than one half that of the Lange coupler and two-stage Wilkinson power combiner respectively. They were used to construct a QPSK modulator, employing balanced reflection topology, in which the HBTs acted as switches. The QPSK channel showed +-0.4 dB amplitude imbalance and +-2 degrees phase error over 24~32GHz.

For more information see:

Yi Sun, A.P. Freundorfer and D. Sawatzky, "A QPSK DIRECT DIGITAL MODULATOR IN GaAs HBT at 28 GHz," Conference on Electrical and Computer Engineering, CCECE 2005, May 1-4, 2005, Saskatoon, Saskatchewan Canada, paper 1568953255.

A new overlay coupler for direct digital modulator in GaAs HBT

Yi Sun, and A.P. Freundorfer
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − A new overlay coupler has been realized at millimeter-wave frequency with an area that is less than one half that of the Lange coupler. It was used to construct a BPSK modulator, employing balanced reflection topology, in which the HBTs acted as switches. It was shown that the BPSK modulator could be modulated at 1Gb/s at 28GHz.

For more information see:

Yi Sun and A. P. Freundorfer, "A new overlay coupler for direct digital modulator in GaAs HBT," IEEE Transactions on Microwave Theory and Techniques,Vol. 52, No. 8 , Aug. 2004, pp. 1830 − 1835.

A Novel 20 to 40 GHz Monolithic Passive Differential Coupler for MMICs Applications

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − This paper presents the design and performance characteristics of a novel broadband passive differential coupler that has been developed for MMIC s applications. The new coupler utilizes a multi-dielectric layer structure to achieve a broadband performance from 20 to 40 GHz in a simple coplanar configuration. A return loss better than 20 dB, with an isolation of 25 dB have been achieved over the band of interest. Also a phase and amplitude mismatch better than 2° and 1 dB has been realized over the frequency band from 20 to 40 GHz. This performance is especially important to the intended use with wideband double balanced mixers, and amplifiers.

Simulation: Ansoft HFSS and Zeland IE3D
Layout tools: ADS (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: IBM SiGe HBT
Technical Support: Queen's University
Funding: NSERC

For more information see:

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, "A Novel 20 to 40 GHz Monolithic Passive Differential Coupler for MMICs Applications ," 2005 IEEE MTT-S International Microwave Symposium Digest, Long Beach, USA, June 12-17, paper WE4E-3.

A High-Bit Rate Ka-Band Direct Conversion QPSK Demodulator

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, Peter Frank, and Dave Sawatzky
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − This letter presents a -band high bit rate direct conversion demodulator. The demodulator was monolithically implemented using GaInP-GaAs HBT process. Measured results of the packaged demodulator show a conversion gain of 8 dB, LOand RF port match better than 10 dB, input 1-dB gain compression point occurring at 3 dBm, and I/Q phase and amplitude mismatch within +-3 and +-0.5 dB, respectively. The detection performance of the developed demodulator has been examined with bit rates up to 1 Gb/s and excellent performance has been obtained.

Simulation: ADS and Zeland IE3D
Layout tools: ADS (secondary), Zeland IE3D (secondary) and Cadence (primary)
Fab: Nortel GaAs
Technical Support: Gain Microwave
Funding: NSERC

For more information see:

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, P. Frank, D. Sawatzky, "A High-Bit Rate Ka-Band Direct Conversion QPSK Demodulator," IEEE Microwave and Wireless Components Letters, Vol. 18, No. 5, May 2008, pp. 365 - 367.
A.P. Freundorfer, K. Hamed, Y. Sun, Y. Antar, P. Frank, D. Sawatzky, "A direct digital 1 Gb/S modulator/demodulator experiment in free space using GaAS HBT at 30 GHz," CCECE 2008, Canadian Conference on Electrical and Computer Engineering, 4-7 May 2008, pp. 1035 - 1038.

AN INTEGRATED 24-GHz DIFFERENTIAL VCO USING SiGe HBT TECHNOLOGY

K.W. Hamed, A.P. Freundorfer, and Y.M.M. Antar
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − This letter presents the design and performance characteristics of an integrated 24-GHz differential voltage-controlled oscillator (VCO). The developed VCO was implemented monolithically using the IBM BICMOS5HP process. Oscillator measured results show a tuning range of 1 GHz from 24.6 to 23.6 GHz with less than 1 dB variation in the differential output power over the entire tuning range. The fabricated VCO also exhibits a measured phase noise of -105 dBc/Hz at 1 MHz off the carrier.

Simulation: ADS and Zeland IE3D
Layout tools: ADS and Cadence
Fab: IBM SiGe
Technical Support: Queen's
Funding: NSERC

For more information see:

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, "An integrated 24-GHz differential VCO using SiGe HBT technology," Wiley Microwave and Optical Technology Letters, Vol. 50, No. 9, September 2008, pp. 2322-2325.

A positive/negative refractive index coplanar transmission line in CMOS for controlled insertion phase

Podilchak Symon, Frank Brian, Freundorfer Al, and Antar Yahia
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − A positive/negative refractive index coplanar transmission line is presented and used for phase control in CMOS circuits. Good performance has been achieved.

Simulation: Ansoft HFSS
Layout tools: ADS and Cadence
Fab: IBM SiGe
Technical Support: Queen's and Royal Military College
Funding: NSERC

For more information see:

S.K. Podilchak, B.M. Frank, A.P. Freundorfer and Y.M.M. Antar, "A positive/negative refractive index coplanar transmission line in CMOS for controlled insertion phase, " Wiley Optical and Microwave Technology Letters, vol. 50, pp. 2227-2229, Aug. 2008.

A 26 GHz Integrated Differential DRO Implemented Using SiGe-HBT Technology

Podilchak Symon, Frank Brian, Freundorfer Al, and Antar Yahia
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L 3N6
freund@queensu.ca

Abstract − This paper describes for the first time the design and performance characteristics of a new monolithic 26 GHz differential dielectric resonator oscillator (DRO) implemented using the IBM SiGeHP5 process. The proposed DRO integrates a novel coupling mechanism to excite the TE_01d mode of a cylindrical dielectric resonator in the presence of a conducting silicon substrate in close proximity. Experimental results show an oscillation frequency occurring at 25.96 GHz with a single ended output power of -9.49 dBm, and a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier.

Simulation:Agilent ADS and Ansoft HFSS
Layout tools: ADS and Cadence
Fab: IBM SiGe
Technical Support: Queen's
Funding: NSERC

For more information see:

K.W. Hamed, A.P. Freundorfer, Y.M.M. Antar, "A 26 GHz Integrated Differential DRO Implemented Using SiGe-HBT Technology," 2007 IEEE MTT-S International Microwave Symposium Digest, Honolulu, Hawaii, USA, 3-8 June 2007, pp. 657 - 660.

Wireless Circuits

Ceramics Grown onto Substrate/Circuits

Silicon Circuits

HBT Circuits

MESFET Circuits

Components

Publications

Barium Strontium Titanate Capacitor Fabrication on Copper Printed Circuit Board

Ca5Nb2TiO12 Rectangular Dielectric Resonator Antenna on Silicon for Wireless Applications

Integrated on-chip Ba2Ti9O20 Dielectric Resonator Oscillator in GaAs Technology

Dielectric Resonator Antenna on Silicon Substrate for System On-Chip Applications

An Integrated Receiver for Wireless Applications

A Coplanar Ka-Band Balanced Common-Gate Amplifier in 0.8 mm GaAs MESFET

A Novel Common Gate Mixer for Wireless Applications

Design of a Single Chip GaAs MESFET Dielectric Resonator Oscillator at 26 GHz

A Ka-band GaInP/GaAs HBT Receiver

A Ka-band GaInP/GaAs HBT Double Balanced Downconvert Mixer using Lumped Element Balun

A Ka-band GaInP/GaAs HBT Four-stage LNA

A Ka-band GaInP/GaAs HBT Double Balanced Upconvert Mixer using Lumped Element Balun

Broadband Folded Wilkinson Power Combiner/Splitter

A novel 15 to 45 GHz monolithic passive balun for MMICs applications

A QPSK DIRECT DIGITAL MODULATOR IN GaAs HBT at 28 GHz

A new overlay coupler for direct digital modulator in GaAs HBT

A Novel 20 to 40 GHz Monolithic Passive Differential Coupler for MMICs Applications

A High-Bit Rate Ka-Band Direct Conversion QPSK Demodulator

AN INTEGRATED 24-GHz DIFFERENTIAL VCO USING SiGe HBT TECHNOLOGY

A positive/negative refractive index coplanar transmission line in CMOS for controlled insertion phase

Abstract − A positive/negative refractive index coplanar transmission line is presented and used for phase control in CMOS circuits. Good performance has been achieved.

A 26 GHz Integrated Differential DRO Implemented Using SiGe-HBT Technology

Ca₅Nb₂TiO₁₂ Rectangular Dielectric Resonator Antenna on Silicon for Wireless Applications

Integrated on-chip Ba₂Ti₉O₂₀ Dielectric Resonator Oscillator in GaAs Technology