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Archived Circuits


Adaptive Filters

FIR-IIR Filters
Positive Tap Weight Transversal Filters
Positive and Negative Tap Weight Transversal Filters

Preamplifiers

Photo Diode On Preamplifier
Transversal Preamplifier
Distributed Preamplifier
Balanced Preamplifier

Misc

Modulator Drivers
Predistortion Circuit
CMOS Gain Block

Publications

The following electronic papers at this web site are in journal publications and therefore have copyrights attached to them. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the the appropriate publisher.




MMIC Adaptive Transversal Filtering for Optical Communication Systems

A. P. Freundorfer, J. Lee and Y. Jamani*
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, CANADA K7L 3N6

*Canadian Microelectronics Corporation
210A Carruthers Hall
Kingston, Ontario, Canada K7L 3N6

ABSTRACT- An adaptive transversal filter (equalizer), which has only positive tap weights, will be discussed. It has a measured bandwidth that can be controlled from 2 GHz to 8 GHz. AGC and phase shift function of this circuit for microwave applications are presented. A new adaptive transversal filter with negative and positive tap weights can be operated in a bandpass mode. When integrated with a MSM photo-detector on the same chip, one could in principle make a photo receiver that can AGC and control phase shift.




Nine tap transversal filter

Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation)
Technical Support: High Speed Research Laboratory at Queen's, CRC and Nortel Technologies
Funding: NSERC and TRIO

For more information see:




MMIC Adaptive Transversal Filtering Using Gilbert Cells and is Suitable for High Speed Lightwave Systems

J. Lee and A. P. Freundorfer
Department of Electrical and Computer Engineering
Queen’s University
Kingston, Ontario, CANADA K7L 3N6

ABSTRACT- An adaptive transversal filter (equalizer), which has positive and negative tap weights, will be discussed. Measured results will be presented that show an increased passband control. An example of pulse shaping/generation of a modified duobinary signal is also shown.



Five tap transversal filter

Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron SAGFET (through Canadian Microelectronics Corporation)
Technical Support: High Speed Research Laboratory at Queen's, CRC and Nortel Technologies
Funding: NSERC and TRIO

For more information see:




A 10 Gb/s AIGaAs/GaAs HBT High Power Fully Differential Limiting Distributed Amplifier for III-V Mach-Zehnder- Modulator

Thomas Y. K. Wong, Al P. Freundorfer*, Bruce C. Beggs, and John E. Sitch
Nortel
Advanced Technology Laboratory
PO Box 3511, Station C
Ottawa, Ontario
Canada K1Y 4H7


*Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario K7L 3N6
Canada
freund@eleceng.ee.queensu.ca

Abstract-High power, high frequency linear distributed amplifiers are available commercially which provide high power single-ended drive capability from a single-ended source. The signal source can be either analog or digital. Such amplifiers must have stringent gain and phase response requirement over a wide bandwidth in order to maintain good eye quality of the digital signal. A limiting amplifier, with less stringent bandwidth requirement than analog amplifiers, can be used to amplify pure digital signal source. The purpose of this paper is to present a high power, fully differential limiting distributed amplifier operating at 10 Gb/s. The amplifier has been fabricated with both AIGaAs/GaAs and InGaPIGaAs heterojunction bipolar transistor (HBT) processes. The amplifier is designed to drive any 50 W system. In particular, this amplifier is intended to drive a III-V Mach-Zehnder modulator.



Simulation: Hspice
Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel HBT
Technical Support: Nortel Technologies
Funding: Nortel Technologies

For more information see:




Over 20 GHz MMIC Pre/post-distortion Circuit for Improved Dynamic Range Broadband Analog Fibre Optic Link

P.Myslinski, C.Szubert
Institute for National Measurement Standards, National Research Council

A.P.Freundorfer
Department of Electrical and Computer Engineering, Queen's University

P.Shearing
Electrical Engineering, Royal Military College of Canada

J.Sitch
Advanced Technology Laboratory, Nortel Technology

M.Davies
Institute for Microstructural Sciences, National Research Council

J.Lee
Defence Research Establishment Ottawa, Department of National Defence

ABSTRACT-A MMIC pre/post-distortion circuit for an analog fibre optic link based on a Mach-Zehnder modulator is designed, fabricated, and tested. The pre/post-distortion circuit operates in the bandwidth over 20 GHz and improves the spurious free dynamic range of the broadband analog fibre link by 3 dB to 110 dB/Hz2/3. In addition, the unpackaged pre/post-distortion circuit chip operates to over the 40 GHz bandwidth. To the best of our knowledge, the described pre/post-distortion circuit improves the dynamic range of the fibre optic link in the widest bandwidth ever reported.

Design Tools: Simulation: Hspice Layout tools: Cadence
Fab: Nortel HBT
Technical Support: NRC and Nortel Technologies
Funding: NRC and Nortel

For more information see:




Performance of 1-10 GHz Traveling Wave Amplifiers in 0.18 um CMOS

B.M. Frank, A.P. Freundorfer and Y.M.M. Antar


Abstract-This paper presents two four-stage traveling wave amplifiers (TWA) fabricated in a 0.18 m CMOS process. A TWA with an internal drain bias network achieved a gain of 5 dB out to 10 GHz while drawing a total of 110 mA. Another TWA without an on-chip bias network achieved a gain of 8 dB out to 10 GHz while drawing a total of 124 mA. These are the highest frequency CMOS traveling wave amplifiers known to the authors.



Simulation: Hspice and ADS
Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: TSMC 0.18um CMOS
Technical Support: Nortel Technologies
Funding: CITO and NSERC

For more information see:




Distributed MESFET Preamplifier

Al P. Freundorfer and The Linh Nguyen
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario Canada K7L 3N6

Abstract-The theory of noise in a distributed MESFET preamplifier is developed. From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width. A front-end tuning circuit was designed using filter theory to further improve the noise performance of the preamplifier. A monolithic GaAs MESFET distributed preamplifier was fabricated with on chip front-end tuning components. Using a 35 mm InGaAs p-i-n photodiode, the preamplifier was shown to have an equivalent input noise current density of 8 and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 mm GaAs MESFET process.


Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation)
Technical Support: High Speed Research Laboratory at Queen's, CRC and Nortel Technologies
Funding: NSERC and TRIO

For more information see:




A Balanced Distributed Preamplifier using MMIC GaAs MESFET Technology

T. L. Nguyen and A. P. Freundorfer
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, Canada K7L-3N6
freund@eleceng.ee.queensu.ca

Abstract-A MMIC balanced preamplifier was fabricated using a 0.8 mm gate length process. A 45 dBW transimpedance gain, a 6 GHz bandwidth, a 10 input noise and a 12 dB CMRR were measured.


Photo of balanced preamplifier chip

Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation)
Technical Support: High Speed Research Laboratory at Queen's, CRC and Nortel Technologies
Funding: NSERC and TRIO

 

For more information see:




Noise analysis of a photoreceiver using a P-I-N and GaAs HBT distributed amplifier combination

X. Tian, A.P. Freundorfer, and L. Roy
Department of Electrical and Computer Engineering
University of Ottawa
Ottawa, Ontario Canada

Abstract— A noise analysis for a Common-Collector-Cascode traveling wave HBT preamplifier is developed. The photoreceiver, consisting of a P-I-N and GaAs HBT MMIC distributed amplifier, was implemented using Nortel’s fT=70GHz GaAs HBT process, is the first to have a P-I-N mounted on the MMIC chip. The P-I-N preamplifier, having a measured bandwidth of 22GHz, displayed a measured average equivalent input noise current density of 24 pA/sqrt(Hz). Good agreement was obtained between the predicted and measured noise performance.


Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel HBT
Technical Support: High Speed Research Laboratory at Queen's and Nortel Networks
Funding: NSERC and CITO

For more information see:




Adaptive Transversal Preamplifier for High Speed Lightwave Systems

A. P. Freundorfer, D. H. Choi and Y. Jamani*
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, CANADA K7L 3N6

*Canadian Microelectronics Corporation
210A Carruthers Hall
Kingston, Ontario, Canada K7L 3N6

ABSTRACT -A nine-tap transversal preamplifier using cascode MESFET's in a distributed structure has been designed for pulse shaping data, AGC and group delay control in high speed lightwave systems. The circuit was fabricated in a microwave monolithic integrated circuit (MMIC) implementation using 0.8 mm GaAs MESFET technology. The AGC capability was demonstrated. The best noise measured for this preamplifier was 15 .




Nine tap transversal Preamplifier

Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation)
Technical Support: High Speed Research Laboratory at Queen's and Nortel Technologies
Funding: NSERC

For more information see:




Electronic Dispersion Compensation ICs for High Speed Long Haul Lightwave Systems

A.P. Freundorfer, D. H. Choi, J. Lee and Y. Jamani
Department of Electrical and Computer Engineering
Queen's University
Kingston, Ontario, CANADA K7L 3N6

ABSTRACT- Transversal filters are a sub-class of finite impulse response (FIR) - infinite impulse response (IIR) filters. By using FIR-IIR filters one can reduce filter order and compensate for a larger variety of dispersion. It will be shown that the IIR filter can be used to compensate for chromatic dispersion. An example will be given of a 120km dispersion limited 10 Gb/s system in which the IIR filter was able to compensate for chromatic dispersion to extend the reach to 210km. An implementation of a FIR-IIR MMIC will also be shown and discussed.




FIR-IIR filter

Design Tools: Simulation: Hspice Layout tools: HP/eesof Libra series IV (secondary) and Cadence (primary)
Fab: Nortel 0.8 micron Sagfet (through Canadian Microelectronics Corporation)
Technical Support: High Speed Research Laboratory at Queen's, CRC and Nortel Technologies
Funding: NSERC and TRIO

For more information see: